| Literature DB >> 25910157 |
Guixin Cao1, D J Singh2, X-G Zhang1, German Samolyuk2, Liang Qiao1, Chad Parish2, Ke Jin3, Yanwen Zhang2,3, Hangwen Guo2, Siwei Tang1,3, Wenbin Wang2, Jieyu Yi1,3, Claudia Cantoni2, Wolter Siemons2, E Andrew Payzant1, Michael Biegalski1, T Z Ward2, David Mandrus2,3, G M Stocks2, Zheng Gai1.
Abstract
A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.Entities:
Year: 2015 PMID: 25910157 DOI: 10.1103/PhysRevLett.114.147202
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161