Literature DB >> 25909688

Photocurrent generation with two-dimensional van der Waals semiconductors.

Michele Buscema1, Joshua O Island, Dirk J Groenendijk, Sofya I Blanter, Gary A Steele, Herre S J van der Zant, Andres Castellanos-Gomez.   

Abstract

Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D materials benefit from sizable mobilities and large on/off ratios, due to the large modulation achievable via the gate field-effect. Moreover, being mechanically strong and flexible, these materials can withstand large strain (>10%) before rupture, making them interesting for strain engineering and flexible devices. Even in their single layer form, semiconducting 2D materials have demonstrated efficient light absorption, enabling large responsivity in photodetectors. Therefore, semiconducting layered 2D materials are strong candidates for optoelectronic applications, especially for photodetection. Here, we review the state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.

Entities:  

Year:  2015        PMID: 25909688     DOI: 10.1039/c5cs00106d

Source DB:  PubMed          Journal:  Chem Soc Rev        ISSN: 0306-0012            Impact factor:   54.564


  52 in total

1.  Two-dimensional non-volatile programmable p-n junctions.

Authors:  Dong Li; Mingyuan Chen; Zhengzong Sun; Peng Yu; Zheng Liu; Pulickel M Ajayan; Zengxing Zhang
Journal:  Nat Nanotechnol       Date:  2017-06-12       Impact factor: 39.213

Review 2.  Liquid-Exfoliated 2D Materials for Optoelectronic Applications.

Authors:  Fuad Indra Alzakia; Swee Ching Tan
Journal:  Adv Sci (Weinh)       Date:  2021-03-11       Impact factor: 16.806

3.  Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2.

Authors:  Amir Muhammad Afzal; Muhammad Zahir Iqbal; Ghulam Dastgeer; Aqrab Ul Ahmad; Byoungchoo Park
Journal:  Adv Sci (Weinh)       Date:  2021-03-16       Impact factor: 16.806

Review 4.  Silicon/2D-material photodetectors: from near-infrared to mid-infrared.

Authors:  Chaoyue Liu; Jingshu Guo; Laiwen Yu; Jiang Li; Ming Zhang; Huan Li; Yaocheng Shi; Daoxin Dai
Journal:  Light Sci Appl       Date:  2021-06-09       Impact factor: 17.782

5.  Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures.

Authors:  Debora Pierucci; Hugo Henck; Carl H Naylor; Haikel Sediri; Emmanuel Lhuillier; Adrian Balan; Julien E Rault; Yannick J Dappe; François Bertran; Patrick Le Fèvre; A T Charlie Johnson; Abdelkarim Ouerghi
Journal:  Sci Rep       Date:  2016-06-01       Impact factor: 4.379

6.  Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.

Authors:  Xing Zhou; Qi Zhang; Lin Gan; Huiqiao Li; Jie Xiong; Tianyou Zhai
Journal:  Adv Sci (Weinh)       Date:  2016-06-22       Impact factor: 16.806

7.  Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction.

Authors:  Sayantan Ghosh; Abin Varghese; Kartikey Thakar; Sushovan Dhara; Saurabh Lodha
Journal:  Nat Commun       Date:  2021-06-07       Impact factor: 14.919

8.  Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry.

Authors:  Seongin Hong; Nicolò Zagni; Sooho Choo; Na Liu; Seungho Baek; Arindam Bala; Hocheon Yoo; Byung Ha Kang; Hyun Jae Kim; Hyung Joong Yun; Muhammad Ashraful Alam; Sunkook Kim
Journal:  Nat Commun       Date:  2021-06-11       Impact factor: 14.919

9.  An ultrasensitive molybdenum-based double-heterojunction phototransistor.

Authors:  Shun Feng; Chi Liu; Qianbing Zhu; Xin Su; Wangwang Qian; Yun Sun; Chengxu Wang; Bo Li; Maolin Chen; Long Chen; Wei Chen; Lili Zhang; Chao Zhen; Feijiu Wang; Wencai Ren; Lichang Yin; Xiaomu Wang; Hui-Ming Cheng; Dong-Ming Sun
Journal:  Nat Commun       Date:  2021-07-02       Impact factor: 14.919

10.  Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors.

Authors:  A Robin; E Lhuillier; X Z Xu; S Ithurria; H Aubin; A Ouerghi; B Dubertret
Journal:  Sci Rep       Date:  2016-05-04       Impact factor: 4.379

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.