Literature DB >> 25893537

Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene.

Debora Pierucci1, Haikel Sediri1, Mahdi Hajlaoui1,2, Jean-Christophe Girard1, Thomas Brumme3, Matteo Calandra3, Emilio Velez-Fort1,3, Gilles Patriarche1, Mathieu G Silly2, Gabriel Ferro4, Véronique Soulière4, Massimiliano Marangolo5,6, Fausto Sirotti2, Francesco Mauri3, Abdelkarim Ouerghi1.   

Abstract

The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high Tc superconductivity, magnetic order, or charge density wave order. Here we demonstrate that rhombohedral multilayers are easily obtained by epitaxial growth on 3C-SiC(111) on a 2° off-axis 6H-SiC(0001). The resulting samples contain rhombohedral sequences of five layers on 70% of the surface. We confirm the presence of the flat band at the Fermi level by scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy, in close agreement with the predictions of density functional theory calculations.

Entities:  

Keywords:  STEM; STM/STS; angle-resolved photoemission spectroscopy; density functional theory; flat band; rhombohedral multilayer graphene

Year:  2015        PMID: 25893537     DOI: 10.1021/acsnano.5b01239

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  12 in total

1.  On the Localization of Persistent Currents Due to Trapped Magnetic Flux at the Stacking Faults of Graphite at Room Temperature.

Authors:  Regina Ariskina; Markus Stiller; Christian E Precker; Winfried Böhlmann; Pablo D Esquinazi
Journal:  Materials (Basel)       Date:  2022-05-10       Impact factor: 3.748

2.  Coverage-dependent essential properties of halogenated graphene: A DFT study.

Authors:  Ngoc Thanh Thuy Tran; Duy Khanh Nguyen; Olga E Glukhova; Ming-Fa Lin
Journal:  Sci Rep       Date:  2017-12-19       Impact factor: 4.379

3.  Optical properties of monolayer tinene in electric fields.

Authors:  Rong-Bin Chen; Szu-Chao Chen; Chih-Wei Chiu; Ming-Fa Lin
Journal:  Sci Rep       Date:  2017-05-12       Impact factor: 4.379

4.  Extremely flat band in bilayer graphene.

Authors:  D Marchenko; D V Evtushinsky; E Golias; A Varykhalov; Th Seyller; O Rader
Journal:  Sci Adv       Date:  2018-11-09       Impact factor: 14.136

5.  Asymmetry-enriched electronic and optical properties of bilayer graphene.

Authors:  Bor-Luen Huang; Chih-Piao Chuu; Ming-Fa Lin
Journal:  Sci Rep       Date:  2019-01-29       Impact factor: 4.379

6.  Concentration-Diversified Magnetic and Electronic Properties of Halogen-Adsorbed Silicene.

Authors:  Duy Khanh Nguyen; Ngoc Thanh Thuy Tran; Yu-Huang Chiu; Ming-Fa Lin
Journal:  Sci Rep       Date:  2019-09-24       Impact factor: 4.379

7.  Spectroscopic Signatures of Electronic Excitations in Raman Scattering in Thin Films of Rhombohedral Graphite.

Authors:  Aitor García-Ruiz; Sergey Slizovskiy; Marcin Mucha-Kruczyński; Vladimir I Fal'ko
Journal:  Nano Lett       Date:  2019-08-07       Impact factor: 11.189

8.  High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001).

Authors:  Mahdi Hajlaoui; Haikel Sediri; Debora Pierucci; Hugo Henck; Thanyanan Phuphachong; Mathieu G Silly; Louis-Anne de Vaulchier; Fausto Sirotti; Yves Guldner; Rachid Belkhou; Abdelkarim Ouerghi
Journal:  Sci Rep       Date:  2016-01-07       Impact factor: 4.379

9.  Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer.

Authors:  Debora Pierucci; Thomas Brumme; Jean-Christophe Girard; Matteo Calandra; Mathieu G Silly; Fausto Sirotti; Antoine Barbier; Francesco Mauri; Abdelkarim Ouerghi
Journal:  Sci Rep       Date:  2016-09-15       Impact factor: 4.379

10.  Atomic-Scale Tuning of Graphene/Cubic SiC Schottky Junction for Stable Low-Bias Photoelectrochemical Solar-to-Fuel Conversion.

Authors:  Hao Li; Yuchen Shi; Huan Shang; Weimin Wang; Jun Lu; Alexei A Zakharov; Lars Hultman; Roger I G Uhrberg; Mikael Syväjärvi; Rositsa Yakimova; Lizhi Zhang; Jianwu Sun
Journal:  ACS Nano       Date:  2020-04-07       Impact factor: 15.881

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