Literature DB >> 25868985

Environmental Changes in MoTe2 Excitonic Dynamics by Defects-Activated Molecular Interaction.

Bin Chen, Hasan Sahin1, Aslihan Suslu, Laura Ding, Mariana I Bertoni, F M Peeters1, Sefaattin Tongay.   

Abstract

Monolayers of group VI transition metal dichalcogenides possess direct gaps in the visible spectrum with the exception of MoTe2, where its gap is suitably located in the infrared region but its stability is of particular interest, as tellurium compounds are acutely sensitive to oxygen exposure. Here, our environmental (time-dependent) measurements reveal two distinct effects on MoTe2 monolayers: For weakly luminescent monolayers, photoluminescence signal and optical contrast disappear, as if they are decomposed, but yet remain intact as evidenced by AFM and Raman measurements. In contrast, strongly luminescent monolayers retain their optical contrast for a prolonged amount of time, while their PL peak blue-shifts and PL intensity saturates to slightly lower values. Our X-ray photoelectron spectroscopy measurements and DFT calculations suggest that the presence of defects and functionalization of these defect sites with O2 molecules strongly dictate their material properties and aging response by changing the excitonic dynamics due to deep or shallow states that are created within the optical band gap. Presented results not only shed light on environmental effects on fundamental material properties and excitonic dynamics of MoTe2 monolayers but also highlight striking material transformation for metastable 2D systems such as WTe2, silicone, and phosphorene.

Entities:  

Keywords:  2D materials; MoTe2; environmental stability; excitons; photoluminescence

Year:  2015        PMID: 25868985     DOI: 10.1021/acsnano.5b00985

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  15 in total

1.  Phonon Anharmonicity in Bulk T d -MoTe2.

Authors:  Jaydeep Joshi; Iris Stone; Ryan Beams; Sergiy Krylyuk; Irina Kalish; Albert Davydov; Patrick Vora
Journal:  Appl Phys Lett       Date:  2016       Impact factor: 3.791

2.  Doping of MoTe2 via Surface Charge Transfer in Air.

Authors:  Gheorghe Stan; Cristian V Ciobanu; Sri Ranga Jai Likith; Asha Rani; Siyuan Zhang; Christina A Hacker; Sergiy Krylyuk; Albert V Davydov
Journal:  ACS Appl Mater Interfaces       Date:  2020-04-02       Impact factor: 9.229

Review 3.  Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

Authors:  Chuanhui Gong; Yuxi Zhang; Wei Chen; Junwei Chu; Tianyu Lei; Junru Pu; Liping Dai; Chunyang Wu; Yuhua Cheng; Tianyou Zhai; Liang Li; Jie Xiong
Journal:  Adv Sci (Weinh)       Date:  2017-10-06       Impact factor: 16.806

4.  Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors.

Authors:  Benjamin Sirota; Nicholas Glavin; Sergiy Krylyuk; Albert V Davydov; Andrey A Voevodin
Journal:  Sci Rep       Date:  2018-06-06       Impact factor: 4.379

5.  Polymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallization.

Authors:  Jyun-Hong Huang; Hao-Hua Hsu; Ding Wang; Wei-Ting Lin; Chun-Cheng Cheng; Yao-Jen Lee; Tuo-Hung Hou
Journal:  Sci Rep       Date:  2019-06-19       Impact factor: 4.379

6.  Spin-orbital effects in metal-dichalcogenide semiconducting monolayers.

Authors:  J A Reyes-Retana; F Cervantes-Sodi
Journal:  Sci Rep       Date:  2016-04-20       Impact factor: 4.379

7.  Unusual dimensionality effects and surface charge density in 2D Mg(OH)2.

Authors:  Aslihan Suslu; Kedi Wu; Hasan Sahin; Bin Chen; Sijie Yang; Hui Cai; Toshihiro Aoki; Seyda Horzum; Jun Kang; Francois M Peeters; Sefaattin Tongay
Journal:  Sci Rep       Date:  2016-02-05       Impact factor: 4.379

8.  Pronounced Photovoltaic Response from Multi-layered MoTe2 Phototransistor with Asymmetric Contact Form.

Authors:  Junku Liu; Nan Guo; Xiaoyang Xiao; Kenan Zhang; Yi Jia; Shuyun Zhou; Yang Wu; Qunqing Li; Lin Xiao
Journal:  Nanoscale Res Lett       Date:  2017-11-22       Impact factor: 4.703

9.  A gate-free monolayer WSe2 pn diode.

Authors:  Jhih-Wei Chen; Shun-Tsung Lo; Sheng-Chin Ho; Sheng-Shong Wong; Thi-Hai-Yen Vu; Xin-Quan Zhang; Yi-De Liu; Yu-You Chiou; Yu-Xun Chen; Jan-Chi Yang; Yi-Chun Chen; Ying-Hao Chu; Yi-Hsien Lee; Chung-Jen Chung; Tse-Ming Chen; Chia-Hao Chen; Chung-Lin Wu
Journal:  Nat Commun       Date:  2018-08-07       Impact factor: 14.919

10.  Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter.

Authors:  Junku Liu; Yangyang Wang; Xiaoyang Xiao; Kenan Zhang; Nan Guo; Yi Jia; Shuyun Zhou; Yang Wu; Qunqing Li; Lin Xiao
Journal:  Nanoscale Res Lett       Date:  2018-09-21       Impact factor: 4.703

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