Warning: Undefined array key "mm" in /www/wwwroot/www.ai-bt.com/si.php on line 10 Deprecated: trim(): Passing null to parameter #1 ($string) of type string is deprecated in /www/wwwroot/www.ai-bt.com/si.php on line 10 Single grain boundary break junction for suspended nanogap electrodes with gapwidth down to 1-2 nm by focused ion beam milling.

Literature DB >> 25854513

Single grain boundary break junction for suspended nanogap electrodes with gapwidth down to 1-2 nm by focused ion beam milling.

Ajuan Cui¹, Zhe Liu², Huanli Dong¹, Yujin Wang², Yonggang Zhen¹, Wuxia Li², Junjie Li², Changzhi Gu², Wenping Hu^1,3.

Abstract

Single grain boundary junctions are used for the fabrication of suspended nanogap electrodes with a gapwidth down to 1-2 nm through the break of such junctions by focused ion beam (FIB) milling. With advantages of stability and no debris, such nanogap electrodes are suitable for single molecular electronic device construction.

Keywords: focused ion beam milling; molecular electronics; nanogap electrodes

Year: 2015 PMID： 25854513 DOI： 10.1002/adma.201500527

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

8 in total

1. Effects of Tearing Conditions on the Crack Propagation in a Monolayer Graphene Sheet.

Authors: Jiao Shi; Weihua Yu; Chunwei Hu; Haiyan Duan; Jiaxing Ji; Yuanyuan Kang; Kun Cai
Journal: Int J Mol Sci Date: 2022-06-09 Impact factor: 6.208

2. Nanolithography using thermal stresses.

Authors: Gangadhar Purohit; Monica Katiyar
Journal: RSC Adv Date: 2018-01-29 Impact factor: 4.036

3. Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps.

Authors: Hiroshi Suga; Hiroya Suzuki; Yuma Shinomura; Shota Kashiwabara; Kazuhito Tsukagoshi; Tetsuo Shimizu; Yasuhisa Naitoh
Journal: Sci Rep Date: 2016-10-11 Impact factor: 4.379

Single grain boundary break junction for suspended nanogap electrodes with gapwidth down to 1-2 nm by focused ion beam milling.

1. Effects of Tearing Conditions on the Crack Propagation in a Monolayer Graphene Sheet.

2. Nanolithography using thermal stresses.

3. Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps.

4. Fabrication of a Horizontal and a Vertical Large Surface Area Nanogap Electrochemical Sensor.

Review 5. Scalable Fabrication of Metallic Nanogaps at the Sub-10 nm Level.

Review 6. Plasmonic metal nanostructures with extremely small features: new effects, fabrication and applications.

7. Graphene-Based Nanoscale Vacuum Channel Transistor.

8. Design and fabrication of crack-junctions.