| Literature DB >> 25844634 |
Sang Jin Kim, Teajun Choi, Bora Lee, Sunwoo Lee1, Kyoungjun Choi, Jong Bo Park, Je Min Yoo, Yong Seok Choi, Jaechul Ryu2, Philip Kim3, James Hone1, Byung Hee Hong3.
Abstract
We report an ultraclean, cost-effective, and easily scalable method of transferring and patterning large-area graphene using pressure sensitive adhesive films (PSAFs) at room temperature. This simple transfer is enabled by the difference in wettability and adhesion energy of graphene with respect to PSAF and a target substrate. The PSAF-transferred graphene is found to be free from residues and shows excellent charge carrier mobility as high as ∼17,700 cm(2)/V·s with less doping compared to the graphene transferred by thermal release tape (TRT) or poly(methyl methacrylate) (PMMA) as well as good uniformity over large areas. In addition, the sheet resistance of graphene transferred by recycled PSAF does not change considerably up to 4 times, which would be advantageous for more cost-effective and environmentally friendly production of large-area graphene films for practical applications.Entities:
Keywords: Clean transfer; adhesion energy; graphene patterning; supporting polymer recycle; surface wetting
Year: 2015 PMID: 25844634 DOI: 10.1021/acs.nanolett.5b00440
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189