| Literature DB >> 25843970 |
Jacek Gasiorowski1, Andrei Ionut Mardare2, Niyazi Serdar Sariciftci1, Achim Walter Hassel2.
Abstract
The electrochemical oxidation of a next generation low bandgap high performance photovoltaic material namely poly[4,8-bis-substituted-benzo[1,2-b:4,5-b0]dithiophene-2,6-diyl-alt-4-substituted-thieno[3,4-b] thiophene-2,6-diyl] (PBDTTT-c) thin film was investigated using a scanning droplet cell microscope. Cyclic voltammetry was used for the basic characterization of the oxidation/doping of PBDTTT-c. Application of the different final potentials during the electrochemical study provides a close look to the oxidation kinetics. The electrical properties of both doped and undoped PBDTTT-c were analyzed in situ by electrochemical impedance spectroscopy giving the possibility to correlate the changes in the doping level with the subsequent changes in the resistance and capacitance. As a result one oxidation peak was found during the cyclic voltammetry and in potentiostatic measurements. From Mott-Schottky analysis a donor concentration of 2.3 × 1020 cm-3 and a flat band potential of 1.00 V vs. SHE were found. The oxidation process resulted in an increase of the conductivity by two orders of magnitude reaching a maximum for the oxidized form of 1.4 S cm-1.Entities:
Keywords: Electrochemical doping; Organic semiconductors; Polymer thin films; Scanning droplet cell microscopy (SDCM)
Year: 2013 PMID: 25843970 PMCID: PMC4376049 DOI: 10.1016/j.electacta.2013.07.050
Source DB: PubMed Journal: Electrochim Acta ISSN: 0013-4686 Impact factor: 6.901
Fig. 1Chemical structure of poly[4,8-bis-substituted-benzo[1,2-b:4,5-b0]dithiophene-2,6-diyl-alt-4-substituted-thieno[3,4-b] thiophene-2,6-diyl] (PBDTTT-c) polymer.
Fig. 2Cyclic voltammetry as a function of the maximum achievable potential measured during oxidation of PBDTTT-c polymer.
Fig. 3Time dependent potentiostatic characterization during oxidation of PBDTTT-c (a). Analysis of potentiostatic measurement during oxidation process. The current density (b), charge density (c) and charge variation (d) are plotted as a function of applied potential.
Fig. 4Bode plots of impedance (a) and phase (b) as a function of frequency measured in Mott-Schottky regime during electrochemical oxidation. The measurement where done between 0 and 1.5 V vs. SHE.
Fig. 5Resolved electrical parameters from EIS study: (a) resistance values of PBDTTT-c layer plotted together with corresponding conductivity values and (b) Mott-Schottky plot of the conductivity.