Literature DB >> 25836180

Narrow-linewidth short-pulse III-V-on-silicon mode-locked lasers based on a linear and ring cavity geometry.

S Keyvaninia, S Uvin, M Tassaert, X Fu, S Latkowski, J Mariën, L Thomassen, F Lelarge, G Duan, P Verheyen, G Lepage, J Van Campenhout, E Bente, G Roelkens.   

Abstract

Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive mode-locked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. Stabilization of the repetition rate of these devices using hybrid mode-locking is also demonstrated.

Year:  2015        PMID: 25836180     DOI: 10.1364/OE.23.003221

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Hybrid modeling approach for mode-locked laser diodes with cavity dispersion and nonlinearity.

Authors:  Stijn Cuyvers; Stijn Poelman; Kasper Van Gasse; Bart Kuyken
Journal:  Sci Rep       Date:  2021-05-11       Impact factor: 4.379

2.  Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser.

Authors:  Alvaro Moscoso-Mártir; Juliana Müller; Elmira Islamova; Florian Merget; Jeremy Witzens
Journal:  Sci Rep       Date:  2017-09-20       Impact factor: 4.379

  2 in total

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