| Literature DB >> 25826228 |
Jeong-Il Park1, Jong Won Chung1, Joo-Young Kim1, Jiyoul Lee1,2, Ji Young Jung1, Bonwon Koo1, Bang-Lin Lee1, Soon W Lee3, Yong Wan Jin1, Sang Yoon Lee1.
Abstract
We present the synthesis, characterization, and structural analysis of a thiophene-rich heteroacene, dibenzothiopheno[6,5-b:6',5'-f]thieno[3,2-b]thiophene (DBTTT) as well as its application in field-effect transistors. The design of DBTTT is based on the enhancement of intermolecular charge transfer through strong S-S interactions. Crystal structure analysis showed that the intermolecular π-π distance is shortened and that the packing density is higher than those of the electronically equivalent benzene analogue, dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). The highest hole mobility we obtained in polycrystalline DBTTT thin-film transistors was 19.3 cm(2)·V(-1)·s(-1), six times higher than that of DNTT-based transistors. The observed isotropic angular mobilities and thermal stabilities at temperatures up to 140 °C indicate the great potential of DBTTT for attaining device uniformity and processability.Entities:
Year: 2015 PMID: 25826228 DOI: 10.1021/jacs.5b01108
Source DB: PubMed Journal: J Am Chem Soc ISSN: 0002-7863 Impact factor: 15.419