Literature DB >> 25809222

Growth and Optical Properties of High-Quality Monolayer WS2 on Graphite.

Yu Kobayashi1, Shogo Sasaki1, Shohei Mori1, Hiroki Hibino2, Zheng Liu3, Kenji Watanabe4, Takashi Taniguchi4, Kazu Suenaga3, Yutaka Maniwa1, Yasumitsu Miyata1,5.   

Abstract

Atomic-layer transition metal dichalcogenides (TMDCs) have attracted appreciable interest due to their tunable band gap, spin-valley physics, and potential device applications. However, the quality of TMDC samples available still poses serious problems, such as inhomogeneous lattice strain, charge doping, and structural defects. Here, we report on the growth of high-quality, monolayer WS2 onto exfoliated graphite by high-temperature chemical vapor deposition (CVD). Monolayer-grown WS2 single crystals present a uniform, single excitonic photoluminescence peak with a Lorentzian profile and a very small full-width at half-maximum of 21 meV at room temperature and 8 meV at 79 K. Furthermore, in these samples, no additional peaks are observed for charged and/or bound excitons, even at low temperature. These optical responses are completely different from the results of previously reported TMDCs obtained by mechanical exfoliation and CVD. Our findings indicate that the combination of high-temperature CVD with a cleaved graphite surface is an ideal condition for the growth of high-quality TMDCs, and such samples will be essential for revealing intrinsic physical properties and for future applications.

Entities:  

Keywords:  CVD growth; WS2; exciton; graphite; line width; photoluminescence

Year:  2015        PMID: 25809222     DOI: 10.1021/acsnano.5b00103

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  9 in total

1.  Directly Visualizing Photoinduced Renormalized Momentum-Forbidden Electronic Quantum States in an Atomically Thin Semiconductor.

Authors:  Hao-Yu Chen; Hung-Chang Hsu; Chuan-Chun Huang; Ming-Yang Li; Lain-Jong Li; Ya-Ping Chiu
Journal:  ACS Nano       Date:  2022-05-18       Impact factor: 18.027

2.  Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.

Authors:  Xing Zhou; Qi Zhang; Lin Gan; Huiqiao Li; Jie Xiong; Tianyou Zhai
Journal:  Adv Sci (Weinh)       Date:  2016-06-22       Impact factor: 16.806

3.  Controlled edge dependent stacking of WS2-WS2 Homo- and WS2-WSe2 Hetero-structures: A Computational Study.

Authors:  Kamalika Ghatak; Kyung Nam Kang; Eui-Hyeok Yang; Dibakar Datta
Journal:  Sci Rep       Date:  2020-02-03       Impact factor: 4.379

4.  Microscopic Mechanism of Van der Waals Heteroepitaxy in the Formation of MoS2/hBN Vertical Heterostructures.

Authors:  Mitsuhiro Okada; Mina Maruyama; Susumu Okada; Jamie H Warner; Yusuke Kureishi; Yosuke Uchiyama; Takashi Taniguchi; Kenji Watanabe; Tetsuo Shimizu; Toshitaka Kubo; Masatou Ishihara; Hisanori Shinohara; Ryo Kitaura
Journal:  ACS Omega       Date:  2020-11-30

Review 5.  Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation.

Authors:  Hiroki Ago; Susumu Okada; Yasumitsu Miyata; Kazunari Matsuda; Mikito Koshino; Kosei Ueno; Kosuke Nagashio
Journal:  Sci Technol Adv Mater       Date:  2022-05-06       Impact factor: 7.821

6.  Microscopic basis for the band engineering of Mo1-xWxS2-based heterojunction.

Authors:  Shoji Yoshida; Yu Kobayashi; Ryuji Sakurada; Shohei Mori; Yasumitsu Miyata; Hiroyuki Mogi; Tomoki Koyama; Osamu Takeuchi; Hidemi Shigekawa
Journal:  Sci Rep       Date:  2015-10-07       Impact factor: 4.379

7.  Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction.

Authors:  Yu Kobayashi; Shoji Yoshida; Ryuji Sakurada; Kengo Takashima; Takahiro Yamamoto; Tetsuki Saito; Satoru Konabe; Takashi Taniguchi; Kenji Watanabe; Yutaka Maniwa; Osamu Takeuchi; Hidemi Shigekawa; Yasumitsu Miyata
Journal:  Sci Rep       Date:  2016-08-12       Impact factor: 4.379

8.  Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition.

Authors:  Pengyu Liu; Tao Luo; Jie Xing; Hong Xu; Huiying Hao; Hao Liu; Jingjing Dong
Journal:  Nanoscale Res Lett       Date:  2017-10-03       Impact factor: 4.703

9.  Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors.

Authors:  Yuhei Miyauchi; Satoru Konabe; Feijiu Wang; Wenjin Zhang; Alexander Hwang; Yusuke Hasegawa; Lizhong Zhou; Shinichiro Mouri; Minglin Toh; Goki Eda; Kazunari Matsuda
Journal:  Nat Commun       Date:  2018-07-03       Impact factor: 14.919

  9 in total

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