Literature DB >> 25809085

How important is the {103} plane of stable Ge2 Sb2 Te5 for phase-change memory?

W Zhang1,2, W T Zheng1, J-G Kim3, X Q Cui1, L Li4, J G Qi5, Y-J Kim3, S A Song6,2.   

Abstract

Closely correlating with {200} plane of cubic phase, {103} plane of hexagonal phase of Ge(2)Sb(2)Te(5) plays a crucial role in achieving fast phase change process as well as formation of modulation structures, dislocations and twins in Ge(2)Sb(2)Te(5). The behaviors of {103} plane of hexagonal phase render the phase-change memory process as a nanoscale shape memory.
© 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

Keywords:  Ge2Sb2Te5; face-centered-cubic (FCC); hexagonal; phase-change memory; shape memory

Year:  2015        PMID: 25809085     DOI: 10.1111/jmi.12242

Source DB:  PubMed          Journal:  J Microsc        ISSN: 0022-2720            Impact factor:   1.758


  3 in total

Review 1.  Phase change thin films for non-volatile memory applications.

Authors:  A Lotnyk; M Behrens; B Rauschenbach
Journal:  Nanoscale Adv       Date:  2019-09-18

2.  Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures.

Authors:  Andriy Lotnyk; Ulrich Ross; Sabine Bernütz; Erik Thelander; Bernd Rauschenbach
Journal:  Sci Rep       Date:  2016-05-25       Impact factor: 4.379

3.  Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film.

Authors:  Yonghui Zheng; Yan Cheng; Rong Huang; Ruijuan Qi; Feng Rao; Keyuan Ding; Weijun Yin; Sannian Song; Weili Liu; Zhitang Song; Songlin Feng
Journal:  Sci Rep       Date:  2017-07-19       Impact factor: 4.379

  3 in total

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