Literature DB >> 25801406

Corrigendum: Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.

Sanghun Jeon, Seung-Eon Ahn, Ihun Song, Chang Jung Kim, U-In Chung, Eunha Lee, Inkyung Yoo, Arokia Nathan, Sungsik Lee, Khashayar Ghaffarzadeh, John Robertson, Kinam Kim.   

Abstract

Year:  2015        PMID： 25801406     DOI： 10.1038/nmat4236

Source DB:  PubMed          Journal:  Nat Mater        ISSN： 1476-1122            Impact factor:   43.841


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  1 in total

1.  Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.

Authors:  Sanghun Jeon; Seung-Eon Ahn; Ihun Song; Chang Jung Kim; U-In Chung; Eunha Lee; Inkyung Yoo; Arokia Nathan; Sungsik Lee; John Robertson; Kinam Kim
Journal:  Nat Mater       Date:  2012-02-26       Impact factor: 43.841
  1 in total
  1 in total

1.  Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor.

Authors:  Mingzhi Dai; Weiliang Wang; Pengjun Wang; Muhammad Zahir Iqbal; Nasim Annabi; Nasir Amin
Journal:  Sci Rep       Date:  2017-09-08       Impact factor: 4.379
  1 in total

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