Literature DB >> 25786781

An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions.

Hongwei Tan1, Gang Liu, Xiaojian Zhu, Huali Yang, Bin Chen, Xinxin Chen, Jie Shang, Wei D Lu, Yihong Wu, Run-Wei Li.   

Abstract

A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2- x/AlOy/Al structure, is demonstrated. Arising from the photo-induced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  adjustable photoconductivity; arithmetic; information demodulating; non-volatile memory; resistive switching

Year:  2015        PMID： 25786781     DOI： 10.1002/adma.201500039

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  9 in total

1.  Memory phototransistors based on exponential-association photoelectric conversion law.

Authors:  Zhibin Shao; Tianhao Jiang; Xiujuan Zhang; Xiaohong Zhang; Xiaofeng Wu; Feifei Xia; Shiyun Xiong; Shuit-Tong Lee; Jiansheng Jie
Journal:  Nat Commun       Date:  2019-03-20       Impact factor: 14.919

Review 2.  Self-Powered Memristive Systems for Storage and Neuromorphic Computing.

Authors:  Jiajuan Shi; Zhongqiang Wang; Ye Tao; Haiyang Xu; Xiaoning Zhao; Ya Lin; Yichun Liu
Journal:  Front Neurosci       Date:  2021-03-31       Impact factor: 4.677

Review 3.  Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing.

Authors:  Ki Chang Kwon; Ji Hyun Baek; Kootak Hong; Soo Young Kim; Ho Won Jang
Journal:  Nanomicro Lett       Date:  2022-02-05

4.  A photon-controlled diode with a new signal-processing behavior.

Authors:  Shun Feng; Ruyue Han; Lili Zhang; Chi Liu; Bo Li; Honglei Zhu; Qianbing Zhu; Wei Chen; Hui-Ming Cheng; Dong-Ming Sun
Journal:  Natl Sci Rev       Date:  2022-05-10       Impact factor: 23.178

5.  Flexible Artificial Optoelectronic Synapse based on Lead-Free Metal Halide Nanocrystals for Neuromorphic Computing and Color Recognition.

Authors:  Ying Li; Jiahui Wang; Qing Yang; Guozhen Shen
Journal:  Adv Sci (Weinh)       Date:  2022-06-05       Impact factor: 17.521

6.  Bi2O2Se-based integrated multifunctional optoelectronics.

Authors:  Dharmendra Verma; Bo Liu; Tsung-Cheng Chen; Lain-Jong Li; Chao-Sung Lai
Journal:  Nanoscale Adv       Date:  2022-08-01

7.  Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device.

Authors:  Fengzhen Lv; Tingting Zhong; Yongfu Qin; Haijun Qin; Wenfeng Wang; Fuchi Liu; Wenjie Kong
Journal:  Nanomaterials (Basel)       Date:  2021-05-21       Impact factor: 5.076

8.  Conductance Quantization in Resistive Random Access Memory.

Authors:  Yang Li; Shibing Long; Yang Liu; Chen Hu; Jiao Teng; Qi Liu; Hangbing Lv; Jordi Suñé; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2015-10-26       Impact factor: 4.703

Review 9.  Memristive Artificial Synapses for Neuromorphic Computing.

Authors:  Wen Huang; Xuwen Xia; Chen Zhu; Parker Steichen; Weidong Quan; Weiwei Mao; Jianping Yang; Liang Chu; Xing'ao Li
Journal:  Nanomicro Lett       Date:  2021-03-06
  9 in total

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