Literature DB >> 25757453

Arc-melting to narrow the bandgap of oxide semiconductors.

Gang Ou1, Dongke Li, Wei Pan, Qinghua Zhang, Ben Xu, Lin Gu, Cewen Nan, Hui Wu.   

Abstract

The bandgap of a series of oxide semiconductors is narrowed by a quick and facile arc-melting method. A defective structure is formed in the fast melting and cooling process without changing its phase structure. Enhanced optical and electrical properties are found in the arc-melted oxide, such as enhanced photocatalytic properties of the arc-melted ZnO under visible light.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  bandgap engineering; defect chemistry; inorganic semiconductors; photocatalysts

Year:  2015        PMID： 25757453     DOI： 10.1002/adma.201405763

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  3 in total

1.  pH-regulated template-free assembly of Sb4O5Cl2 hollow microsphere crystallites with self-narrowed bandgap and optimized photocatalytic performance.

Authors:  Liuqing Yang; Jianfeng Huang; Liyun Cao; Li Shi; Qing Yu; Xingang Kong; Yanni Jie
Journal:  Sci Rep       Date:  2016-06-16       Impact factor: 4.379

2.  Light Trapping-Mediated Room-Temperature Gas Sensing by Ordered ZnO Nano Structures Decorated with Plasmonic Au Nanoparticles.

Authors:  Poulomi Chakrabarty; Meneka Banik; Narendar Gogurla; Sumita Santra; Samit K Ray; Rabibrata Mukherjee
Journal:  ACS Omega       Date:  2019-07-12

3.  Tuning defects in oxides at room temperature by lithium reduction.

Authors:  Gang Ou; Yushuai Xu; Bo Wen; Rui Lin; Binghui Ge; Yan Tang; Yuwei Liang; Cheng Yang; Kai Huang; Di Zu; Rong Yu; Wenxing Chen; Jun Li; Hui Wu; Li-Min Liu; Yadong Li
Journal:  Nat Commun       Date:  2018-04-03       Impact factor: 14.919
  3 in total

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