| Literature DB >> 25713469 |
Hiroyuki Okazaki1, Takanori Wakita2, Takayuki Muro3, Tetsuya Nakamura3, Yuji Muraoka2, Takayoshi Yokoya2, Shin-Ichiro Kurihara4, Hiroshi Kawarada4, Tamio Oguchi5, Yoshihiko Takano1.
Abstract
We have observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in a heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than in the previous report, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.Entities:
Year: 2015 PMID: 25713469 PMCID: PMC4320147 DOI: 10.1063/1.4907411
Source DB: PubMed Journal: Appl Phys Lett ISSN: 0003-6951 Impact factor: 3.791