Literature DB >> 25712894

Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends.

Xinge Yu1, Li Zeng, Nanjia Zhou, Peijun Guo, Fengyuan Shi, Donald B Buchholz, Q Ma, Junsheng Yu, Vinayak P Dravid, Robert P H Chang, Michael Bedzyk, Tobin J Marks, Antonio Facchetti.   

Abstract

Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP). By adjusting the In2 O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2 O3 :5%PVP-based transistors exhibit mobilities approaching 11 cm(2) V(-1) s(-1) before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  flexible materials; indium oxide; polymer blends; thin-film transistors; transparent electronics

Year:  2015        PMID： 25712894     DOI： 10.1002/adma.201405400

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  9 in total

1.  Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide.

Authors:  Wei Huang; Po-Hsiu Chien; Kyle McMillen; Sawankumar Patel; Joshua Tedesco; Li Zeng; Subhrangsu Mukherjee; Binghao Wang; Yao Chen; Gang Wang; Yang Wang; Yanshan Gao; Michael J Bedzyk; Dean M DeLongchamp; Yan-Yan Hu; Julia E Medvedeva; Tobin J Marks; Antonio Facchetti
Journal:  Proc Natl Acad Sci U S A       Date:  2020-07-23       Impact factor: 11.205

2.  High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching.

Authors:  Yuan Zhu; Jia-Sheng Liang; Vairavel Mathayan; Tomas Nyberg; Daniel Primetzhofer; Xun Shi; Zhen Zhang
Journal:  ACS Appl Mater Interfaces       Date:  2022-04-27       Impact factor: 10.383

3.  Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.

Authors:  Yogeenth Kumaresan; Yusin Pak; Namsoo Lim; Yonghun Kim; Min-Ji Park; Sung-Min Yoon; Hyoc-Min Youn; Heon Lee; Byoung Hun Lee; Gun Young Jung
Journal:  Sci Rep       Date:  2016-11-23       Impact factor: 4.379

Review 4.  Inorganic and Organic Solution-Processed Thin Film Devices.

Authors:  Morteza Eslamian
Journal:  Nanomicro Lett       Date:  2016-09-08

5.  Highly Stretchable High-Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates.

Authors:  Xiaopan Song; Ting Zhang; Lei Wu; Ruijin Hu; Wentao Qian; Zongguang Liu; Junzhuan Wang; Yi Shi; Jun Xu; Kunji Chen; Linwei Yu
Journal:  Adv Sci (Weinh)       Date:  2022-01-29       Impact factor: 16.806

6.  Fully solution-induced high performance indium oxide thin film transistors with ZrO x high-k gate dielectrics.

Authors:  Li Zhu; Gang He; Jianguo Lv; Elvira Fortunato; Rodrigo Martins
Journal:  RSC Adv       Date:  2018-05-08       Impact factor: 3.361

7.  Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.

Authors:  Ye Kyun Kim; Cheol Hyoun Ahn; Myeong Gu Yun; Sung Woon Cho; Won Jun Kang; Hyung Koun Cho
Journal:  Sci Rep       Date:  2016-05-20       Impact factor: 4.379

8.  Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution.

Authors:  Hendrik Faber; Satyajit Das; Yen-Hung Lin; Nikos Pliatsikas; Kui Zhao; Thomas Kehagias; George Dimitrakopulos; Aram Amassian; Panos A Patsalas; Thomas D Anthopoulos
Journal:  Sci Adv       Date:  2017-03-31       Impact factor: 14.136

Review 9.  Hybrid Polymer/Metal Oxide Thin Films for High Performance, Flexible Transistors.

Authors:  Jae Won Jeong; Hye Suk Hwang; Dalsu Choi; Byung Chol Ma; Jaehan Jung; Mincheol Chang
Journal:  Micromachines (Basel)       Date:  2020-03-04       Impact factor: 2.891
  9 in total

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