| Literature DB >> 25703599 |
Guihuan Chen1, Yongqiang Yu1,2, Kun Zheng2, Tao Ding1, Wenliang Wang1, Yang Jiang2, Qing Yang1.
Abstract
Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) , high detectivity of ≈10(11) Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.Entities:
Keywords: bismuth sulfide; nanosheets; photodetectors; photoresponse; photovoltaics
Year: 2015 PMID: 25703599 DOI: 10.1002/smll.201403508
Source DB: PubMed Journal: Small ISSN: 1613-6810 Impact factor: 13.281