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Literature DB >> 25688488

High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors.

Mohamad Insan Nugraha¹, Roger Häusermann, Satria Zulkarnaen Bisri, Hiroyuki Matsui, Mykhailo Sytnyk, Wolfgang Heiss, Jun Takeya, Maria Antonietta Loi.

Abstract

Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm(2) V(-1) s(-1) ) and the high on/off ratio (10(5) -10(6) ), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

Entities: Chemical

Keywords: ambipolar transistors; colloidal nanocrystals; density of trap states; field effect transistors

Year: 2015 PMID： 25688488 DOI： 10.1002/adma.201404495

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

8 in total

1. Counterion-Mediated Ligand Exchange for PbS Colloidal Quantum Dot Superlattices.

Authors: Daniel M Balazs; Dmitry N Dirin; Hong-Hua Fang; Loredana Protesescu; Gert H ten Brink; Bart J Kooi; Maksym V Kovalenko; Maria Antonietta Loi
Journal: ACS Nano Date: 2015-11-04 Impact factor: 15.881

2. Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules.

Authors: Mohamad Insan Nugraha; Shohei Kumagai; Shun Watanabe; Mykhailo Sytnyk; Wolfgang Heiss; Maria Antonietta Loi; Jun Takeya
Journal: ACS Appl Mater Interfaces Date: 2017-05-16 Impact factor: 9.229

3. Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

Authors: Mohamad I Nugraha; Roger Häusermann; Shun Watanabe; Hiroyuki Matsui; Mykhailo Sytnyk; Wolfgang Heiss; Jun Takeya; Maria A Loi
Journal: ACS Appl Mater Interfaces Date: 2017-01-27 Impact factor: 9.229

4. Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal.

Authors: Daniel M Balazs; Nisrina Rizkia; Hong-Hua Fang; Dmitry N Dirin; Jamo Momand; Bart J Kooi; Maksym V Kovalenko; Maria Antonietta Loi
Journal: ACS Appl Mater Interfaces Date: 2018-02-02 Impact factor: 9.229

High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors.

1. Counterion-Mediated Ligand Exchange for PbS Colloidal Quantum Dot Superlattices.

2. Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules.

3. Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

4. Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal.

5. FeIn₂S₄ Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors.

6. Electroluminescence Generation in PbS Quantum Dot Light-Emitting Field-Effect Transistors with Solid-State Gating.

7. Trap-mediated electronic transport properties of gate-tunable pentacene/MoS₂ p-n heterojunction diodes.

8. On the Colloidal Stability of PbS Quantum Dots Capped with Methylammonium Lead Iodide Ligands.