| Literature DB >> 25686537 |
E Zapata-Solvas1, D Gómez-García2, A Domínguez-Rodríguez3, R I Todd4.
Abstract
Electric current activated/assisted sintering (ECAS) techniques, such as electrical discharge sintering (EDS) or resistive sintering (RS), have been intensively investigated for longer than 50 years. In this work, a novel system including an electrically insulated graphite die for Spark Plasma Sintering (SPS) is described, which allows the sintering of any refractory ceramic material in less than 1 minute starting from room temperature with heating rates higher than 2000°C/min and an energy consumption up to 100 times lower than with SPS. The system alternates or combines direct resistive sintering (DRS) and indirect resistive sintering (IRS). Electrical insulation of the die has been achieved through the insertion of a film made of alumina fibers between the graphite die and the graphite punches, which are protected from the alumina fiber film by a graphite foil. This system localized the electric current directly through the sample (conductive materials) as in DRS and EDS, or through the thin graphite foil (non-conductive materials) as in IRS, and is the first system capable of being used under EDS or RS conditions independently combining current concentration/localization phenomena.Entities:
Year: 2015 PMID: 25686537 PMCID: PMC4330545 DOI: 10.1038/srep08513
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Diagram of novel settings of the graphite die for; A) DRS and IRS and B) FRS.
Figure 2Relative density versus sintering current for DRS with current applied for 60s.
Figure 3Comparison of SPS data (black lines) and DRS data at 1100 A (red lines) and 1170 A (green lines) for ZrB2; A) Temperature and displacement, B) Voltage and current and C) Power consumption.
The time scale for SPS is on the bottom and for DRS is on the top.
Figure 4Polished cross sections of specimens sintered by DRS; A) 91.6% dense ZrB2 sintered at 1100 A, B) 87.9% dense ZrB2 sintered at 1170 A, C) other side of 87.9% dense ZrB2 sintered at 1170 A, D) 93.8% dense MoSi2 sintered at 820 A, E) Scanning electron microscopy (SEM) micrograph of area E in figure 4 A), F) SEM micrograph of area F in figure 4 B), F′) SEM micrograph of area F′ in figure 4 C), G) SEM micrograph of area g in figure 4 B), H) EDX C map of figure 4F), I) EDX C map of figure 4F′), J) SEM micrograph of area J in figure 4 B), K) EDX O map of figure 4F), L) EDX O map of figure 4F′), M) SEM micrograph of SPSed ZrB2, N) Magnified area marked with a white arrow in figure 4 F), O) lineal EDS indicating the concentration of C, Zr, O and B along the line in figure 4 N).
Disks A and B are viewed at a certain angle to avoid direct camera reflection by the shiny mirror surface.
Figure 5IRS data of Al2O3 sintered at 340 A (black lines) and 350 A (red lines) and FRS data of Al2O3 sintered at 410 A (green lines); A) Temperature and displacement, B) Voltage and current and C) Power consumption and vacuum.
Figure 6Micrographs of dense specimens; A) SEM micrograph of Al2O3, arrows indicate nanograin clusters, B) Transmission electron microscopy (TEM) micrograph of MoSi2.