Theoretical study of the molecular ordering, paracrystallinity, and charge mobilities of oligomers in different crystalline phases.

Molecular ordering and charge transport have been studied computationally for 22 conjugated oligomers fabricated as crystal or thin-film semiconductors. Molecular dynamics (MD) simulations are employed to equilibrate crystal morphologies at 300 K. The paracrystalline order parameter, g, is calculated to characterize structural order in the materials. Charge-transport dynamics are predicted using kinetic Monte Carlo methods based on a charge-hopping mechanism described by the Marcus theory of electron transfer to calculate charge-transfer rates using the VOTCA package. We introduce an error function to assess the reliability of our computed values to reproduce experimental hole mobilities in both crystalline and thin-film morphologies of the 22 conjugated oligomers. For each of the oligomers, we compute hole mobility with three different theoretical models incorporating increasing measures of disorder: (1) a perfect crystal, based on the experimentally derived crystal structure, with no disorder, (2) an MD-equilibrated structure incorporating thermal disorder into the crystal structure, and (3) model 2 above but also incorporating energetic disorder arising from variations in site energies. For the series of known crystals with long-range order, we find that the perfect crystal model produces hole mobilities giving the best fit to experimental data. For the series of thin-film morphologies with short-range order, we observe that the presence of both thermal and energetic disorder is essential for accurate calculation. We also discuss the interplay between hole mobility and other charge-transport parameters in these morphologies, such as reorganization energy and energetic disorder.