| Literature DB >> 25607919 |
Steve Park1, Soo Jin Kim, Ji Hyun Nam, Gregory Pitner, Tae Hoon Lee, Alexander L Ayzner, Huiliang Wang, Scott W Fong, Michael Vosgueritchian, Young Jun Park, Mark L Brongersma, Zhenan Bao.
Abstract
A highly sensitive single-walled carbon nanotube/C60 -based infrared photo-transistor is fabricated with a responsivity of 97.5 A W(-1) and detectivity of 1.17 × 10(9) Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10(4) with a response time of several milliseconds.Entities:
Keywords: carbon nanotubes; fullerene; photodetectors; transistors
Year: 2014 PMID: 25607919 DOI: 10.1002/adma.201404544
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849