| Literature DB >> 25607155 |
Jisoo Kyoung, Doo Jae Park, Sun Jung Byun, Jaeho Lee, Soo Bong Choi, Seongjun Park, Sung Woo Hwang.
Abstract
Herein, we will propose a new application possibility of epsilon-near-zero (ENZ) materials: high resolution wide-field imaging. We show that the resolution can be dramatically enhanced by simply inserting a thin epsilon-near-zero (ENZ) material between the sample and substrate. By performing metal half-plane imaging, we experimentally demonstrate that the resolution could be enhanced by about 47% with a 300-nm-thick SiO<sub>2</sub> interlayer, an ENZ material at 8-μm-wavelength (1250 cm<sup>-1</sup>). The physical origin of the resolution enhancement is the strong conversion of diffracted near fields to quasi-zeroth order far fields enabled by the directive emission of ENZ materials.Entities:
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Year: 2014 PMID: 25607155 DOI: 10.1364/OE.22.031875
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894