Optical injection locking of monolithically integrated photonic source for generation of high purity signals above 100 GHz.

A monolithically integrated photonic source for tuneable mm-wave signal generation has been fabricated. The source consists of 14 active components, i.e. semiconductor lasers, amplifiers and photodetectors, all integrated on a 3 mm(2) InP chip. Heterodyne signals in the range between 85 GHz and 120 GHz with up to -10 dBm output power have been successfully generated. By optically injection locking the integrated lasers to an external optical comb source, high-spectral-purity signals at frequencies >100 GHz have been generated, with phase noise spectral density below -90 dBc/Hz being achieved at offsets from the carrier greater than 10 kHz.