| Literature DB >> 25580926 |
Alexey Tarasov1, Siyuan Zhang, Meng-Yen Tsai, Philip M Campbell, Samuel Graham, Stephen Barlow, Seth R Marder, Eric M Vogel.
Abstract
Highly uniform large-area MoS2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work-function changes of up to ±1 eV can be achieved, with contributions from state filling and surface dipoles. This results in high doping densities of up to ca. 8 × 10(12) cm(-2) .Keywords: 2D materials; chemical doping; field-effect transistors; molybdenum disulfide; redox-active species
Year: 2015 PMID: 25580926 DOI: 10.1002/adma.201404578
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849