Sharp variations in the electronic properties of graphene deposited on the h-BN layer.

Investigation of the complex structure based on the graphene monolayer and the twisted BN monolayer was carried out. Sharp variations in the electronic structure during the hydrogen adsorption at low concentration were observed. Upon increasing the hydrogen concentration on the structure surfaces more impurity levels were observed due to the addition of the hydrogen atoms without any dependence on the position of hydrogen atoms on graphene and BN surfaces. An investigation of the dependence of the band gap on the hydrogen concentration on the Moiré surface was made. Upon increasing the hydrogen concentration the value of the band gap increased up to 0.5 eV.