Literature DB >> 25544679

Automated CBED processing: sample thickness estimation based on analysis of zone-axis CBED pattern.

M Klinger1, M Němec2, L Polívka2, V Gärtnerová2, A Jäger2.   

Abstract

An automated processing of convergent beam electron diffraction (CBED) patterns is presented. The proposed methods are used in an automated tool for estimating the thickness of transmission electron microscopy (TEM) samples by matching an experimental zone-axis CBED pattern with a series of patterns simulated for known thicknesses. The proposed tool detects CBED disks, localizes a pattern in detected disks and unifies the coordinate system of the experimental pattern with the simulated one. The experimental pattern is then compared disk-by-disk with a series of simulated patterns each corresponding to different known thicknesses. The thickness of the most similar simulated pattern is then taken as the thickness estimate. The tool was tested on [0 1 1] Si, [0 1 0] α-Ti and [0 1 1] α-Ti samples prepared using different techniques. Results of the presented approach were compared with thickness estimates based on analysis of CBED patterns in two beam conditions. The mean difference between these two methods was 4.1% for the FIB-prepared silicon samples, 5.2% for the electro-chemically polished titanium and 7.9% for Ar(+) ion-polished titanium. The proposed techniques can also be employed in other established CBED analyses. Apart from the thickness estimation, it can potentially be used to quantify lattice deformation, structure factors, symmetry, defects or extinction distance.
Copyright © 2014 Elsevier B.V. All rights reserved.

Entities:  

Keywords:  Automatization; CBED; Computer vision; TEM; Thickness estimation; Zone axis

Year:  2014        PMID: 25544679     DOI: 10.1016/j.ultramic.2014.12.006

Source DB:  PubMed          Journal:  Ultramicroscopy        ISSN: 0304-3991            Impact factor:   2.689


  2 in total

1.  Crystallographic Tool Box (CrysTBox): automated tools for transmission electron microscopists and crystallographers.

Authors:  Miloslav Klinger; Aleš Jäger
Journal:  J Appl Crystallogr       Date:  2015-10-21       Impact factor: 3.304

2.  Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111).

Authors:  Roman Volkov; Nikolai I Borgardt; Oleg V Konovalov; Sergio Fernández-Garrido; Oliver Brandt; Vladimir M Kaganer
Journal:  Nanoscale Adv       Date:  2021-12-03
  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.