Literature DB >> 25531088

All-electric all-semiconductor spin field-effect transistors.

Pojen Chuang1, Sheng-Chin Ho1, L W Smith2, F Sfigakis2, M Pepper3, Chin-Hung Chen1, Ju-Chun Fan1, J P Griffiths2, I Farrer2, H E Beere2, G A C Jones2, D A Ritchie2, Tse-Ming Chen1.   

Abstract

The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field-effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are overcome by using two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical manner. Such a device is compatible with large-scale integration and holds promise for future spintronic devices for information processing.

Entities:  

Year:  2014        PMID: 25531088     DOI: 10.1038/nnano.2014.296

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  21 in total

1.  Modular Approach to Spintronics.

Authors:  Kerem Yunus Camsari; Samiran Ganguly; Supriyo Datta
Journal:  Sci Rep       Date:  2015-06-11       Impact factor: 4.379

2.  Electric-field-induced Spontaneous Magnetization and Phase Transitions in Zigzag Boron Nitride Nanotubes.

Authors:  Lang Bai; Gangxu Gu; Gang Xiang; Xi Zhang
Journal:  Sci Rep       Date:  2015-07-24       Impact factor: 4.379

3.  A two-dimensional spin field-effect switch.

Authors:  Wenjing Yan; Oihana Txoperena; Roger Llopis; Hanan Dery; Luis E Hueso; Fèlix Casanova
Journal:  Nat Commun       Date:  2016-11-11       Impact factor: 14.919

4.  Magnetic anisotropy control by applying an electric field to the side surface of ferromagnetic films.

Authors:  Hiroshi Terada; Shinobu Ohya; Le Duc Anh; Yoshihiro Iwasa; Masaaki Tanaka
Journal:  Sci Rep       Date:  2017-07-17       Impact factor: 4.379

Review 5.  Surface-Enhanced Raman Scattering in Molecular Junctions.

Authors:  Madoka Iwane; Shintaro Fujii; Manabu Kiguchi
Journal:  Sensors (Basel)       Date:  2017-08-18       Impact factor: 3.576

6.  Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

Authors:  M Oltscher; F Eberle; T Kuczmik; A Bayer; D Schuh; D Bougeard; M Ciorga; D Weiss
Journal:  Nat Commun       Date:  2017-11-27       Impact factor: 14.919

7.  Controlled spatial separation of spins and coherent dynamics in spin-orbit-coupled nanostructures.

Authors:  Shun-Tsung Lo; Chin-Hung Chen; Ju-Chun Fan; L W Smith; G L Creeth; Che-Wei Chang; M Pepper; J P Griffiths; I Farrer; H E Beere; G A C Jones; D A Ritchie; Tse-Ming Chen
Journal:  Nat Commun       Date:  2017-07-10       Impact factor: 14.919

8.  Room temperature manipulation of long lifetime spins in metallic-like carbon nanospheres.

Authors:  Bálint Náfrádi; Mohammad Choucair; Klaus-Peter Dinse; László Forró
Journal:  Nat Commun       Date:  2016-07-18       Impact factor: 14.919

9.  Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature.

Authors:  Katsunori Makihara; Takeshi Kato; Yuuki Kabeya; Yusuke Mitsuyuki; Akio Ohta; Daiki Oshima; Satoshi Iwata; Yudi Darma; Mitsuhisa Ikeda; Seiichi Miyazaki
Journal:  Sci Rep       Date:  2016-09-12       Impact factor: 4.379

10.  Electrical gate control of spin current in van der Waals heterostructures at room temperature.

Authors:  André Dankert; Saroj P Dash
Journal:  Nat Commun       Date:  2017-07-05       Impact factor: 14.919

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