Characterizing integration time and gray-level-related nonlinearities in a NMOS sensor.

We report a nonlinearity effect related to the integration time in a double-beam spectroradiometer equipped with two negative-module metal-oxide semiconductor (NMOS) sensors. This effect can be explained by the addition of photoelectrons produced by the radiant flux on the sensors during the readout phase to the photoelectrons produced during the measurement phase. A new method is proposed to characterize and correct both gray-level and integration-time-related nonlinearities in NMOS sensors. This method is experimentally simple and outperforms other commonly used correction procedures.