| Literature DB >> 25377127 |
Daeseok Lee1, Jaesung Park, Jaehyuk Park, Jiyong Woo, Euijun Cha, Sangheon Lee, Kibong Moon, Jeonghwan Song, Yunmo Koo, Hyunsang Hwang.
Abstract
A 3D high-density switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize high-density ReRAM applications.Entities:
Keywords: 3D structure; cross-point array; metal-insulator transition; non-volatilememory; titanium oxide; two-terminal switch
Year: 2014 PMID： 25377127 DOI： 10.1002/adma.201403675
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849