| Literature DB >> 25352107 |
Dominik Martin1, Johannes Müller, Tony Schenk, Thomas M Arruda, Amit Kumar, Evgheni Strelcov, Ekaterina Yurchuk, Stefan Müller, Darius Pohl, Uwe Schröder, Sergei V Kalinin, Thomas Mikolajick.
Abstract
Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.Entities:
Keywords: HfO2; Si-doping; antiferroelectricity; electromechanical response mechanisms; ferroelectricity; piezoresponse force microscopy (PFM)
Year: 2014 PMID： 25352107 DOI： 10.1002/adma.201403115
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849