Literature DB >> 25343440

Atomically engineered metal-insulator transition at the TiO2/LaAlO3 heterointerface.

Makoto Minohara1, Takashi Tachikawa, Yasuo Nakanishi, Yasuyuki Hikita, Lena F Kourkoutis, Jun-Sik Lee, Chi-Chang Kao, Masahiro Yoshita, Hidefumi Akiyama, Christopher Bell, Harold Y Hwang.   

Abstract

We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO3 (001) from AlO2 to LaO, the room-temperature sheet conductance of anatase TiO2 films are increased by over 3 orders of magnitude, transforming the intrinsic insulating state to a high mobility metallic state, while maintaining excellent optical transparency.

Entities:  

Keywords:  Anatase TiO2; heterointerfaces; metal−insulator transition; termination layer switching

Year:  2014        PMID: 25343440     DOI: 10.1021/nl5039192

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  1 in total

1.  Oxide interfaces: Mismatched lattices patched up.

Authors:  Kenneth R Poeppelmeier; James M Rondinelli
Journal:  Nat Chem       Date:  2016-04       Impact factor: 24.427

  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.