| Literature DB >> 25322028 |
John Covey, Aaron D Finke, Xiaochuan Xu, Wenzhi Wu, Yaguo Wang, François Diederich, Ray T Chen.
Abstract
An amorphous film of the third-order nonlinear optical material DDMEBT was spun onto silicon chips for the first time, filling 80 nm lithographic features. A 710 μm² device was designed, fabricated, and tested that acts both as a nonlinear resonator switch and as an input/output grating coupler to a perfectly vertical single mode fiber. Autocorrelation and spectral measurements indicate the device has <1 ps response time, 4 nm of switching bandwidth, and 4 dB of on/off contrast. With sufficient power, this all-optical device can potentially modulate a single optical carrier frequency in excess of 1 THz.Entities:
Year: 2014 PMID: 25322028 DOI: 10.1364/OE.22.024530
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894