| Literature DB >> 25321730 |
Xiao Meng, Chee Hing Tan, Simon Dimler, John P R David, Jo Shien Ng.
Abstract
An InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and characterized. Leakage current, dark count and photon count measurements were carried out on the devices from 260 to 290 K. Due to better temperature stability of avalanche breakdown in InAlAs, the device breakdown voltage varied by < 0.2 V over the 30 K temperature range studied, which corresponds to a temperature coefficient of breakdown voltage less than 7 mV/K. The single photon detection efficiency achieved in gated mode was 21 and 10% at 260 and 290 K, respectively. However the dark count rates were high due to excessive band-to-band tunneling current in the InAlAs avalanche region.Mesh：
Substances：
Year: 2014 PMID： 25321730 DOI： 10.1364/OE.22.022608
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894