Literature DB >> 25302902

Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride.

J G Lozano1, H Yang1, M P Guerrero-Lebrero2, A J D'Alfonso3, A Yasuhara4, E Okunishi4, S Zhang5, C J Humphreys5, L J Allen3, P L Galindo2, P B Hirsch1, P D Nellist1.   

Abstract

We demonstrate that the aberration-corrected scanning transmission electron microscope has a sufficiently small depth of field to observe depth-dependent atomic displacements in a crystal. The depth-dependent displacements associated with the Eshelby twist of dislocations in GaN normal to the foil with a screw component of the Burgers vector are directly imaged. We show that these displacements are observed as a rotation of the lattice between images taken in a focal series. From the sense of the rotation, the sign of the screw component can be determined.

Entities:  

Year:  2014        PMID: 25302902     DOI: 10.1103/PhysRevLett.113.135503

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

Review 1.  Electron Tomography: A Three-Dimensional Analytic Tool for Hard and Soft Materials Research.

Authors:  Peter Ercius; Osama Alaidi; Matthew J Rames; Gang Ren
Journal:  Adv Mater       Date:  2015-06-18       Impact factor: 30.849

2.  Imaging screw dislocations at atomic resolution by aberration-corrected electron optical sectioning.

Authors:  H Yang; J G Lozano; T J Pennycook; L Jones; P B Hirsch; P D Nellist
Journal:  Nat Commun       Date:  2015-06-04       Impact factor: 14.919

  2 in total

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