| Literature DB >> 25268467 |
Magdalena Huefner1, Ram Krishna Ghosh, Eugene Freeman, Nikhil Shukla, Hanjong Paik, Darrell G Schlom, Suman Datta.
Abstract
We locally investigate the electronic transport through individual tunnel junctions containing a 10 nm thin film of vanadium dioxide (VO2) across its thermally induced phase transition. The insulator-to-metal phase transition in the VO2 film collapses the Hubbard gap (experimentally determined to be 0.4 ± 0.07 V), leading to several orders of magnitude change in tunnel conductance. We quantitatively evaluate underlying transport mechanisms via theoretical quantum mechanical transport calculations which show excellent agreement with the experimental results.Entities:
Keywords: Atomic force microscopy; density functional theory; metal−insulator transition; non-equilibrium Green’s function; tunnel junction; vanadium dioxide
Year: 2014 PMID： 25268467 DOI： 10.1021/nl502065b
Source DB: PubMed Journal: Nano Lett ISSN： 1530-6984 Impact factor: 11.189