Co nanoparticles induced resistive switching and magnetism for the electrochemically deposited polypyrrole composite films.

The resistive switching behavior of Co-nanoparticle-dispersed polypyrrole (PPy) composite films is studied. A novel design method for resistive random access memory (ReRAM) is proposed. The conducting polymer films with metal nanocrystal (NC)-dispersed carbon chains induce the spontaneous oxidization of the conducting polymer at the surface. The resistive switching behavior is achieved by an electric field controlling the oxygen ion mobility between the metal electrode and the conducting polymer film to realize the mutual transition between intrinsic conduction (low resistive state) and oxidized layer conduction (high resistive state). Furthermore, the formation process of intrinsic conductive paths can be effectively controlled in the conducting polymer ReRAM using metal NCs in films because the inner metal NCs induce electric field lines converging around them and the intensity of the electric field at the tip of NCs can greatly exceed that of the other region. Metal NCs can also bring new characteristics for ReRAM, such as magnetism by dispersing magnetic metal NCs in polymer, to obtain multifunctional electronic devices or meet some special purpose in future applications. Our works will enrich the application fields of the electromagnetic PPy composite films and present a novel material for ReRAM devices.