| Literature DB >> 25236580 |
Xingqiang Liu1, Xi Liu, Jingli Wang, Chongnan Liao, Xiangheng Xiao, Shishang Guo, Changzhong Jiang, Zhiyong Fan, Ti Wang, Xiaoshuang Chen, Wei Lu, Weida Hu, Lei Liao.
Abstract
A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon.Entities:
Keywords: InGaZnO; composite materials; nanowires; phototransistors; thin films; thin-film transistors
Year: 2014 PMID： 25236580 DOI： 10.1002/adma.201401732
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849