Literature DB >> 25215991

Atomistic explanation of shear-induced amorphous band formation in boron carbide.

Qi An1, William A Goddard1, Tao Cheng1.   

Abstract

Boron carbide (B4C) is very hard, but its applications are hindered by stress-induced amorphous band formation. To explain this behavior, we used density function theory (Perdew-Burke-Ernzerhof flavor) to examine the response to shear along 11 plausible slip systems. We found that the (0111)/<1101> slip system has the lowest shear strength (consistent with previous experimental studies) and that this slip leads to a unique plastic deformation before failure in which a boron-carbon bond between neighboring icosahedral clusters breaks to form a carbon lone pair (Lewis base) on the C within the icosahedron. Further shear then leads this Lewis base C to form a new bond with the Lewis acidic B in the middle of a CBC chain. This then initiates destruction of this icosahedron. The result is the amorphous structure observed experimentally. We suggest how this insight could be used to strengthen B4C.

Entities:  

Year:  2014        PMID: 25215991     DOI: 10.1103/PhysRevLett.113.095501

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  8 in total

1.  Directional amorphization of boron carbide subjected to laser shock compression.

Authors:  Shiteng Zhao; Bimal Kad; Bruce A Remington; Jerry C LaSalvia; Christopher E Wehrenberg; Kristopher D Behler; Marc A Meyers
Journal:  Proc Natl Acad Sci U S A       Date:  2016-10-12       Impact factor: 11.205

2.  First principles-based multiscale atomistic methods for input into first principles nonequilibrium transport across interfaces.

Authors:  Tao Cheng; Andres Jaramillo-Botero; Qi An; Daniil V Ilyin; Saber Naserifar; William A Goddard
Journal:  Proc Natl Acad Sci U S A       Date:  2018-08-03       Impact factor: 11.205

3.  Breaking the icosahedra in boron carbide.

Authors:  Kelvin Y Xie; Qi An; Takanori Sato; Andrew J Breen; Simon P Ringer; William A Goddard; Julie M Cairney; Kevin J Hemker
Journal:  Proc Natl Acad Sci U S A       Date:  2016-10-06       Impact factor: 11.205

4.  Tuning the deformation mechanisms of boron carbide via silicon doping.

Authors:  Sisi Xiang; Luoning Ma; Bruce Yang; Yvonne Dieudonne; George M Pharr; Jing Lu; Digvijay Yadav; Chawon Hwang; Jerry C LaSalvia; Richard A Haber; Kevin J Hemker; Kelvin Y Xie
Journal:  Sci Adv       Date:  2019-10-25       Impact factor: 14.136

5.  Nucleation of amorphous shear bands at nanotwins in boron suboxide.

Authors:  Qi An; K Madhav Reddy; Jin Qian; Kevin J Hemker; Ming-Wei Chen; William A Goddard
Journal:  Nat Commun       Date:  2016-03-22       Impact factor: 14.919

6.  Disorder and defects are not intrinsic to boron carbide.

Authors:  Swastik Mondal; Elena Bykova; Somnath Dey; Sk Imran Ali; Natalia Dubrovinskaia; Leonid Dubrovinsky; Gleb Parakhonskiy; Sander van Smaalen
Journal:  Sci Rep       Date:  2016-01-18       Impact factor: 4.379

7.  The Effects of Carbon Content on the Anisotropic Deformation Mechanism of Boron Carbide.

Authors:  Jun Li; Lisheng Liu; Shuang Xu; Jinyong Zhang; Yuanli Wu
Journal:  Materials (Basel)       Date:  2018-09-29       Impact factor: 3.623

8.  Carbon-boron clathrates as a new class of sp3-bonded framework materials.

Authors:  Li Zhu; Gustav M Borstad; Hanyu Liu; Piotr A Guńka; Michael Guerette; Juli-Anna Dolyniuk; Yue Meng; Eran Greenberg; Vitali B Prakapenka; Brian L Chaloux; Albert Epshteyn; Ronald E Cohen; Timothy A Strobel
Journal:  Sci Adv       Date:  2020-01-10       Impact factor: 14.136

  8 in total

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