Literature DB >> 25181959

Magnetic-mechanical-electrical-optical coupling effects in GaN-based LED/rare-earth terfenol-D structures.

Mingzeng Peng1, Yan Zhang, Yudong Liu, Ming Song, Junyi Zhai, Zhong Lin Wang.   

Abstract

A multi-field coupling structure is designed and investigated, which combines GaN-based optoelectronic devices and Terfenol-D. The abundant coupling effects and multifunctionalities among magnetics, mechanics, electrics, and optics are investigated by a combination of non-magnetic GaN-based piezoelectronic optoelectronic characteristics and the giant magnetomechanical properties of Terfenol-D. A few potential new areas of studies are proposed.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  InGaN/GaN MQWs; magnetic field effect; multi-field coupling; multifunctionality; optoelectronics.

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Year:  2014        PMID: 25181959     DOI: 10.1002/adma.201402824

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  2 in total

1.  Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication.

Authors:  Chunhua Du; Xin Huang; Chunyan Jiang; Xiong Pu; Zhenfu Zhao; Liang Jing; Weiguo Hu; Zhong Lin Wang
Journal:  Sci Rep       Date:  2016-11-14       Impact factor: 4.379

2.  Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates.

Authors:  Tao Lin; Zhi Yan Zhou; Yao Min Huang; Kun Yang; Bai Jun Zhang; Zhe Chuan Feng
Journal:  Nanoscale Res Lett       Date:  2018-08-22       Impact factor: 4.703

  2 in total

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