Literature DB >> 25181606

Formation and disruption of conductive filaments in a HfO2/TiN structure.

S Brivio1, G Tallarida, E Cianci, S Spiga.   

Abstract

The process of the formation and disruption of nanometric conductive filaments in a HfO2/TiN structure is investigated by conductive atomic force microscopy. The preforming state evidences nonhomogeneous conduction at high fields through conductive paths, which are associated with pre-existing defects and develop into conductive filaments with a forming procedure. The disruption of the same filaments is demonstrated as well, according to a bipolar operation. In addition, the conductive tip of the microscopy is exploited to perform electrical operations on single conductive spots, which evidences that neighboring conductive filaments are not electrically independent. We propose a picture that describes the evolution of the shape of the conductive filaments in the processes of their formation and disruption, which involves the development of conductive branches from a common root; this root resides in the pre-existing defects that lay at the HfO2/TiN interface.

Entities:  

Year:  2014        PMID: 25181606     DOI: 10.1088/0957-4484/25/38/385705

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  5 in total

1.  Analog Memristive Synapse in Spiking Networks Implementing Unsupervised Learning.

Authors:  Erika Covi; Stefano Brivio; Alexander Serb; Themis Prodromakis; Marco Fanciulli; Sabina Spiga
Journal:  Front Neurosci       Date:  2016-10-25       Impact factor: 4.677

2.  Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices.

Authors:  Katharina Skaja; Michael Andrä; Vikas Rana; Rainer Waser; Regina Dittmann; Christoph Baeumer
Journal:  Sci Rep       Date:  2018-07-18       Impact factor: 4.379

3.  Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices.

Authors:  Stefano Brivio; Jacopo Frascaroli; Erika Covi; Sabina Spiga
Journal:  Sci Rep       Date:  2019-04-16       Impact factor: 4.379

4.  Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.

Authors:  Gang Niu; Pauline Calka; Matthias Auf der Maur; Francesco Santoni; Subhajit Guha; Mirko Fraschke; Philippe Hamoumou; Brice Gautier; Eduardo Perez; Christian Walczyk; Christian Wenger; Aldo Di Carlo; Lambert Alff; Thomas Schroeder
Journal:  Sci Rep       Date:  2016-05-16       Impact factor: 4.379

5.  Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing.

Authors:  Jacopo Frascaroli; Stefano Brivio; Erika Covi; Sabina Spiga
Journal:  Sci Rep       Date:  2018-05-08       Impact factor: 4.379

  5 in total

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