Literature DB >> 25178479

Room-temperature photoconductivity far below the semiconductor bandgap.

Zhiming Huang1, Jinchao Tong, Jingguo Huang, Wei Zhou, Jing Wu, Yanqing Gao, Jinxing Lu, Tie Lin, Yanfeng Wei, Junhao Chu.   

Abstract

A concept to stimulate photoconductivity in a semiconductor well below its bandgap in a metal-semiconductor-metal structure with sub-wavelength spacing is proposed. A potential well is induced in the semiconductor by external electromagnetic radiation to trap carriers from the metals. This opens an avenue to generate carriers by photons without adequate excitation energy and is expected to have great significance in modern materials.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  below bandgap; photon detection; semiconductors

Year:  2014        PMID: 25178479     DOI: 10.1002/adma.201402352

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  2 in total

1.  Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave.

Authors:  Wanli Ma; Yanqing Gao; Liyan Shang; Wei Zhou; Niangjuan Yao; Lin Jiang; Qinxi Qiu; Jingbo Li; Yi Shi; Zhigao Hu; Zhiming Huang
Journal:  Adv Sci (Weinh)       Date:  2021-12-19       Impact factor: 16.806

2.  High sensitivity of room-temperature terahertz photodetector based on silicon.

Authors:  Qinxi Qiu; Wanli Ma; Jingbo Li; Lin Jiang; Wangchen Mao; Xuehui Lu; Niangjuan Yao; Yi Shi; Zhiming Huang
Journal:  iScience       Date:  2022-09-26
  2 in total

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