Literature DB >> 25176994

Strain distributions and diffraction peak profiles from crystals with dislocations.

Vladimir M Kaganer1, Karl K Sabelfeld2.   

Abstract

Diffraction profiles for different models of dislocation arrangements are calculated directly by the Monte Carlo method and compared with the strain distributions for the same arrangements, which corresponds to the Stokes-Wilson approximation. It is shown that the strain distributions and the diffraction profiles are in close agreement as long as long-range order is absent. Analytical calculation of the strain distribution for uncorrelated defects is presented. For straight dislocations, the Stokes-Wilson and the Krivoglaz-Wilkens approximations give the same diffraction profiles, with the Gaussian central part and ∝ q(-3) power law at the tails.

Entities:  

Keywords:  Monte Carlo methods; dislocations; peak profiles; powder diffraction; strain

Year:  2014        PMID: 25176994     DOI: 10.1107/S2053273314011139

Source DB:  PubMed          Journal:  Acta Crystallogr A Found Adv        ISSN: 2053-2733            Impact factor:   2.290


  1 in total

1.  Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction.

Authors:  Andrei Benediktovitch; Alexei Zhylik; Tatjana Ulyanenkova; Maksym Myronov; Alex Ulyanenkov
Journal:  J Appl Crystallogr       Date:  2015-04-16       Impact factor: 3.304

  1 in total

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