| Literature DB >> 25171389 |
Dezheng Sun1, Yi Rao, Georg A Reider, Gugang Chen, Yumeng You, Louis Brézin, Avetik R Harutyunyan, Tony F Heinz.
Abstract
Monolayer MoS2 is a direct-gap two-dimensional semiconductor that exhibits strong electron-hole interactions, leading to the formation of stable excitons and trions. Here we report the existence of efficient exciton-exciton annihilation, a four-body interaction, in this material. Exciton-exciton annihilation was identified experimentally in ultrafast transient absorption measurements through the emergence of a decay channel varying quadratically with exciton density. The rate of exciton-exciton annihilation was determined to be (4.3 ± 1.1) × 10(-2) cm(2)/s at room temperature.Entities:
Keywords: MoS2; exciton dynamics; exciton−exciton annihilation; transient absorption spectroscopy
Year: 2014 PMID: 25171389 DOI: 10.1021/nl5021975
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189