Literature DB >> 25167290

Topological crystalline insulators in transition metal oxides.

Mehdi Kargarian1, Gregory A Fiete1.   

Abstract

Topological crystalline insulators possess electronic states protected by crystal symmetries, rather than time-reversal symmetry. We show that the transition metal oxides with heavy transition metals are able to support nontrivial band topology resulting from mirror symmetry of the lattice. As an example, we consider pyrochlore oxides of the form A2M2O7. As a function of spin-orbit coupling strength, we find two Z2 topological insulator phases can be distinguished from each other by their mirror Chern numbers, indicating a different topological crystalline insulators. We also derive an effective k·p Hamiltonian, similar to the model introduced for Pb(1-x)Sn(x)Te, and discuss the effect of an on-site Hubbard interaction on the topological crystalline insulator phase using slave-rotor mean-field theory, which predicts new classes of topological quantum spin liquids.

Entities:  

Year:  2013        PMID: 25167290     DOI: 10.1103/PhysRevLett.110.156403

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator.

Authors:  Junwei Liu; Timothy H Hsieh; Peng Wei; Wenhui Duan; Jagadeesh Moodera; Liang Fu
Journal:  Nat Mater       Date:  2013-12-22       Impact factor: 43.841

2.  First Principles Prediction of Topological Phases in Thin Films of Pyrochlore Iridates.

Authors:  Xiang Hu; Zhicheng Zhong; Gregory A Fiete
Journal:  Sci Rep       Date:  2015-06-16       Impact factor: 4.379

3.  Superlattice valley engineering for designer topological insulators.

Authors:  Xiao Li; Fan Zhang; Qian Niu; Ji Feng
Journal:  Sci Rep       Date:  2014-09-30       Impact factor: 4.379

4.  Epitaxial thin films of pyrochlore iridate Bi2+xIr2-yO7-δ: structure, defects and transport properties.

Authors:  W C Yang; Y T Xie; W K Zhu; K Park; A P Chen; Y Losovyj; Z Li; H M Liu; M Starr; J A Acosta; C G Tao; N Li; Q X Jia; J J Heremans; S X Zhang
Journal:  Sci Rep       Date:  2017-08-10       Impact factor: 4.379

5.  Gapless edge states in (C,O,H)-built molecular system with p-stacking and hydrogen bonds.

Authors:  Małgorzata Wierzbowska
Journal:  Sci Rep       Date:  2017-08-29       Impact factor: 4.379

  5 in total

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