Literature DB >> 25166833

Counting statistics for electron capture in a dynamic quantum dot.

Lukas Fricke1, Michael Wulf1, Bernd Kaestner1, Vyacheslavs Kashcheyevs2, Janis Timoshenko2, Pavel Nazarov2, Frank Hohls1, Philipp Mirovsky1, Brigitte Mackrodt1, Ralf Dolata1, Thomas Weimann1, Klaus Pierz1, Hans W Schumacher1.   

Abstract

We report noninvasive single-charge detection of the full probability distribution P(n) of the initialization of a quantum dot with n electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze-out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model. We identify the athermal capturing mechanism in our sample, testifying to the high precision of our combined theoretical and experimental methods. The distinction between the capturing mechanisms allows us to derive efficient experimental strategies for improving the initialization.

Year:  2013        PMID: 25166833     DOI: 10.1103/PhysRevLett.110.126803

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  7 in total

1.  Non-Markovian full counting statistics in quantum dot molecules.

Authors:  Hai-Bin Xue; Hu-Jun Jiao; Jiu-Qing Liang; Wu-Ming Liu
Journal:  Sci Rep       Date:  2015-03-10       Impact factor: 4.379

2.  Dynamics of a single-atom electron pump.

Authors:  J van der Heijden; G C Tettamanzi; S Rogge
Journal:  Sci Rep       Date:  2017-03-15       Impact factor: 4.379

3.  High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump.

Authors:  Gento Yamahata; Stephen P Giblin; Masaya Kataoka; Takeshi Karasawa; Akira Fujiwara
Journal:  Sci Rep       Date:  2017-03-21       Impact factor: 4.379

4.  Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.

Authors:  Muhammad Fahlesa Fatahilah; Feng Yu; Klaas Strempel; Friedhard Römer; Dario Maradan; Matteo Meneghini; Andrey Bakin; Frank Hohls; Hans Werner Schumacher; Bernd Witzigmann; Andreas Waag; Hutomo Suryo Wasisto
Journal:  Sci Rep       Date:  2019-07-16       Impact factor: 4.379

5.  Quantum Phase Coherence in Mesoscopic Transport Devices with Two-Particle Interaction.

Authors:  Zhimei Wang; Xiaofang Guo; Haibin Xue; Naitao Xue; J-Q Liang
Journal:  Sci Rep       Date:  2015-08-10       Impact factor: 4.379

6.  Gigahertz single-trap electron pumps in silicon.

Authors:  Gento Yamahata; Katsuhiko Nishiguchi; Akira Fujiwara
Journal:  Nat Commun       Date:  2014-10-06       Impact factor: 14.919

7.  Three-waveform bidirectional pumping of single electrons with a silicon quantum dot.

Authors:  Tuomo Tanttu; Alessandro Rossi; Kuan Yen Tan; Akseli Mäkinen; Kok Wai Chan; Andrew S Dzurak; Mikko Möttönen
Journal:  Sci Rep       Date:  2016-11-08       Impact factor: 4.379

  7 in total

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