| Literature DB >> 25155874 |
Jeehwan Kim1, Homare Hiroi, Teodor K Todorov, Oki Gunawan, Masaru Kuwahara, Tayfun Gokmen, Dhruv Nair, Marinus Hopstaken, Byungha Shin, Yun Seog Lee, Wei Wang, Hiroki Sugimoto, David B Mitzi.
Abstract
High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV.Entities:
Keywords: CZTSSe; doping concentration; double emitter; indium sulfide; solar cells
Year: 2014 PMID: 25155874 DOI: 10.1002/adma.201402373
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849