Literature DB >> 25147878

Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine).

Wenbin Zhang1, Cheng Wang, Gang Liu, Xiaojian Zhu, Xinxin Chen, Liang Pan, Hongwei Tan, Wuhong Xue, Zhenghui Ji, Jun Wang, Yu Chen, Run-Wei Li.   

Abstract

Thermally stable poly(triphenylamine) (PTPA) synthesized by an oxidative coupling reaction is used as the functional layer in memory devices, which exhibit non-volatile bistable resistive switching behavior with a large ON/OFF ratio over 5 × 10(8), a long retention time exceeding 8 × 10(3) s and a wide working temperature range of 30-390 K.

Entities:  

Year:  2014        PMID： 25147878     DOI： 10.1039/c4cc04696j

Source DB:  PubMed          Journal:  Chem Commun (Camb)        ISSN： 1359-7345            Impact factor:   6.222


  5 in total

1.  Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend.

Authors:  Tim Leydecker; Martin Herder; Egon Pavlica; Gvido Bratina; Stefan Hecht; Emanuele Orgiu; Paolo Samorì
Journal:  Nat Nanotechnol       Date:  2016-06-20       Impact factor: 39.213

2.  Redox gated polymer memristive processing memory unit.

Authors:  Bin Zhang; Fei Fan; Wuhong Xue; Gang Liu; Yubin Fu; Xiaodong Zhuang; Xiao-Hong Xu; Junwei Gu; Run-Wei Li; Yu Chen
Journal:  Nat Commun       Date:  2019-02-13       Impact factor: 14.919

3.  90% yield production of polymer nano-memristor for in-memory computing.

Authors:  Bin Zhang; Weilin Chen; Jianmin Zeng; Fei Fan; Junwei Gu; Xinhui Chen; Lin Yan; Guangjun Xie; Shuzhi Liu; Qing Yan; Seung Jae Baik; Zhi-Guo Zhang; Weihua Chen; Jie Hou; Mohamed E El-Khouly; Zhang Zhang; Gang Liu; Yu Chen
Journal:  Nat Commun       Date:  2021-03-31       Impact factor: 14.919

4.  Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl).

Authors:  Ying Xin; Xiaofeng Zhao; Xiankai Jiang; Qun Yang; Jiahe Huang; Shuhong Wang; Rongrong Zheng; Cheng Wang; Yanjun Hou
Journal:  RSC Adv       Date:  2018-02-13       Impact factor: 3.361

5.  Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO.

Authors:  Jiahe Huang; Xiaofeng Zhao; Hongyan Zhang; Ju Bai; Shuhong Wang; Cheng Wang; Dongge Ma; Yanjun Hou
Journal:  RSC Adv       Date:  2019-03-27       Impact factor: 4.036
  5 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.