Literature DB >> 25143235

Elastic trapping of dislocation loops in cascades in ion-irradiated tungsten foils.

D R Mason1, X Yi, M A Kirk, S L Dudarev.   

Abstract

Using in situ transmission electron microscopy (TEM), we have observed nanometre scale dislocation loops formed when an ultra-high-purity tungsten foil is irradiated with a very low fluence of self-ions. Analysis of the TEM images has revealed the largest loops to be predominantly of prismatic 1/2〈111〉 type and of vacancy character. The formation of such dislocation loops is surprising since isolated loops are expected to be highly mobile, and should escape from the foil. In this work we show that the observed size and number density of loops can be explained by the fact that the loops are not isolated-the loops formed in close proximity in the cascades interact with each other and with vacancy clusters, also formed in cascades, through long-range elastic fields, which prevent the escape of loops from the foil. We find that experimental observations are well reproduced by object Kinetic Monte Carlo simulations of evolution of cascades only if elastic interaction between the loops is taken into account. Our analysis highlights the profound effect of elastic interaction between defects on the microstructural evolution of irradiated materials.

Entities:  

Year:  2014        PMID: 25143235     DOI: 10.1088/0953-8984/26/37/375701

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  3 in total

1.  Engineering self-organising helium bubble lattices in tungsten.

Authors:  R W Harrison; G Greaves; J A Hinks; S E Donnelly
Journal:  Sci Rep       Date:  2017-08-10       Impact factor: 4.379

2.  Characterizing dislocation loops in irradiated polycrystalline Zr alloys by X-ray line profile analysis of powder diffraction patterns with satellites.

Authors:  Tamás Ungár; Gábor Ribárik; Matthew Topping; Rebecca M A Jones; Xiao Dan Xu; Rory Hulse; Allan Harte; Géza Tichy; Christopher P Race; Philipp Frankel; Michael Preuss
Journal:  J Appl Crystallogr       Date:  2021-05-25       Impact factor: 3.304

3.  Non-random walk diffusion enhances the sink strength of semicoherent interfaces.

Authors:  A Vattré; T Jourdan; H Ding; M-C Marinica; M J Demkowicz
Journal:  Nat Commun       Date:  2016-01-29       Impact factor: 14.919

  3 in total

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