Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000-1).

We develop a bulk silver tip for tip-enhanced Raman scattering (TERS) and obtain TERS spectra of epitaxial graphene on the carbon face of 4H-SiC(000-1) with a high signal-to-noise ratio. Thanks to the high quality of TERS spectra we firstly find that the G band in the TERS spectra exhibits position-by-position variations in both lower wavenumber shifts and spectral broadening. The analysis of the variations reveals that the shifts and broadenings have a linear correlation between each other, indicating that the variations are induced by the position dependent local stress on graphene based on a uniaxial strain model.