Literature DB >> 25133781

Programmable resistive-switch nanowire transistor logic circuits.

Wooyoung Shim1, Jun Yao, Charles M Lieber.   

Abstract

Programmable logic arrays (PLA) constitute a promising architecture for developing increasingly complex and functional circuits through nanocomputers from nanoscale building blocks. Here we report a novel one-dimensional PLA element that incorporates resistive switch gate structures on a semiconductor nanowire and show that multiple elements can be integrated to realize functional PLAs. In our PLA element, the gate coupling to the nanowire transistor can be modulated by the memory state of the resistive switch to yield programmable active (transistor) or inactive (resistor) states within a well-defined logic window. Multiple PLA nanowire elements were integrated and programmed to yield a working 2-to-4 demultiplexer with long-term retention. The well-defined, controllable logic window and long-term retention of our new one-dimensional PLA element provide a promising route for building increasingly complex circuits with nanoscale building blocks.

Keywords:  Nanoprocessor; crossbar arrays; memory; nanocomputing; nanoelectronics; programmable logic arrays

Year:  2014        PMID: 25133781     DOI: 10.1021/nl502654f

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  2 in total

1.  Gunn-Hilsum Effect in Mechanically Strained Silicon Nanowires: Tunable Negative Differential Resistance.

Authors:  Daryoush Shiri; Amit Verma; Reza Nekovei; Andreas Isacsson; C R Selvakumar; M P Anantram
Journal:  Sci Rep       Date:  2018-04-19       Impact factor: 4.379

2.  A conductive polymer nanowire including functional quantum dots generated via pulsed laser irradiation for high-sensitivity sensor applications.

Authors:  Michiko Sasaki; Masahiro Goto
Journal:  Sci Rep       Date:  2021-05-27       Impact factor: 4.379

  2 in total

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